以高動態範圍臨界值切割單一神經元影像的方法及其電腦可讀儲存媒體Method of Segmenting Single Neuron Images with High-Dynamic-Range Thresholds and Computer Readable Storage Medium Thereof
本發明之以高動態範圍臨界值切割單一神經元影像的方法包含(a)備置含神經元之生物組織樣本，並對含神經元之生物組織樣本進行三維成像，以得到原始三維神經影像；(b)濾除原始三維神經影像中訊號強度在第一訊號強度臨界值以下的立體像素，以得到第一經濾除影像；(c)對第一經濾除影像進行骨架追蹤，以得到第一經追蹤影像；(d)利用一方程式計算第一經追蹤影像之每一立體像素的結構重要性分數，以得到每一立體像素的第一次結構重要性分數；(e)逐漸增加訊號強度臨界值並重複步驟(b)、(c)及(d)n-1次；及(f)加總每一立體像素的第一次結構重要性分數一直到第n次結構重要性分數。
閱讀詳細資料以高動態範圍臨界值切割單一神經元影像的方法及其電腦可讀儲存媒體Method of Segmenting Single Neuron Images with High-Dynamic-Range Thresholds and Computer Readable Storage Medium Thereof
The method of segmenting single neuron images with high-dynamic-range thresholds of the present invention includes (a) preparing a biological tissue sample containing neurons and performing imaging to this sample to obtain a three-dimensional raw neuroimage; (b) deleting voxels in the three-dimensional raw neuroimage with signal intensities below a first signal intensity threshold to obtain a first thresholded image; (c) tracing the first thresholded image to obtain a first traced image; (d) calculating a structural importance score of every voxel in the first traced image to obtain a first structural importance score of every voxel; (e) gradually increasing the signal intensity threshold and repeating (b), (c) and (d) n−1 times; (f) summing up all the n structural importance scores of every voxel; (g) deleting voxels with summed structural importance score smaller than a pre-determined value from the raw image to obtain the segmented single neuron.
閱讀詳細資料分散式智慧電網之集中防護方法及其系統
本發明所提供分散式智慧電網之集中防護技術，係於有線或無線之智慧電網中，對於各個終端元件及網路中繼設備提供網路通訊之防禦機制，將智慧電網中傳送之通訊資料，繞送至資安設備進行匹配，根據匹配結果以及相對應的安全策略執行後續處理過程。是等防護技術不僅可以防禦來自外部網路之威脅，而且能夠防禦來自智慧電網內部的攻擊行為，提高了安全性。相較於習知之防護技術須定期更新各網路通訊設備或終端元件韌硬體上之安全規則，本發明係僅需要更新資安設備上集中式安全規則庫即可達成對智慧電網中分散式終端元件之防護，大幅降低管理上之複雜度，並且提高智慧電網整體防護的安全性。
閱讀詳細資料半導體奈米層狀結構及其製作方法 semiconductor nano layer structure and manufacturing method thereof
A method for manufacturing a semiconductor nano layer structure includes: two substrates are provided; a plurality of semiconductor nanowires are formed on one of the substrates; an absorption surface is formed on the other substrate; one of the substrates is fixed on a cylindrical roller, the cylindrical roller is brought into contact with a surface of the substrate which is stationary and is not fixed on the cylindrical roller, and rolled with a constant velocity and pressure so that the semiconductor nanowires are break, detached, transferred and absorbed, and a semiconductor nano layer structure is formed on the stationary substrate; a de-laminating process is performed to separate the semiconductor nano layer structure from the second substrate; an electric Joule heat welding process is locally performed to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure.
閱讀詳細資料具有警示燈之雨傘 The Umbrella with Warning Light
一種具有警示燈之雨傘,一傘骨架、若干的傘支架及固設於傘支架的一傘布面所構成,該傘骨架包含定巢座及動巢座,定巢座設在傘骨架頂端部,動巢座套裝在傘骨架 上,而該傘支架環設傘架上,並且,該傘支架上具有若干之線路;一軟性燈條係設 置於傘骨架且位於傘布面內側,並且該軟性燈條電性連接於傘支架之線路,其中:該 傘支架之末端設有水電池與傘支架之線路相連結,提供電源供軟性燈條使用,而傘骨架與傘布面交錯之內側之具有操控軟性燈條的控制電路,當下雨時,雨水由該傘布面流至該傘支架末端,而該水電池具有一朝上提供雨水注入的容置槽,藉由化學轉換後, 使注入的雨水轉換成電能,使該電能輸出至控制電路,該控制電路提供輸出控制信號給軟性燈條。
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