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半導體奈米層狀結構及其製作方法 semiconductor nano layer structure and manufacturing method thereof

本發明提供一種可獨立存在的半導體奈米層狀結構,其包含至少一半導體奈米線膜,半導體奈米線膜由多數獨立成形之半導體奈米線彼此以特定或任意角度交織排列而形成。本發明並提供一種半導體奈米層狀結構的製作方法,先在第一基板上合成一半導體奈米線陣列,再以一具有一吸附表面的第二基板與第一基板壓合,令半導體奈米線斷裂壓擠形成一緻密的半導體奈米層狀結構,並進行離膜程序,令半導體奈米層狀結構脫離第一及第二基板,再進行一局部電焦耳熱鍵結熔合,令半導體奈米層狀結構之各半導體奈米線彼此熔接或各半導體奈米層狀結構彼此熔接。

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筆直直立奈米線陣列結構及其製造方法 Vertically Oriented Nanostructure and Fabricating Method Thereof

一種筆直直立奈米線陣列製造方法,可在非晶基板上合成筆直直立奈米線陣列結構,進而應用於抗反射表面、場發射顯示器及薄膜太陽能板,藉以提升其效能。本方法主要包括下列步驟:控制氣相沉積環境之一電子濃度及濃度梯度、各種離子濃度及濃度梯度、各種自由基(Radical)濃度、濃度梯度及傳輸方向。控制氣相沉積環境之一長晶熱源方向、基板溫度及基板周遭環境之溫度梯度。控制氣相沉積環境之一電位梯度。

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半導體奈米層狀結構及其製作方法 semiconductor nano layer structure and manufacturing method thereof

A method for manufacturing a semiconductor nano layer structure includes: two substrates are provided; a plurality of semiconductor nanowires are formed on one of the substrates; an absorption surface is formed on the other substrate; one of the substrates is fixed on a cylindrical roller, the cylindrical roller is brought into contact with a surface of the substrate which is stationary and is not fixed on the cylindrical roller, and rolled with a constant velocity and pressure so that the semiconductor nanowires are break, detached, transferred and absorbed, and a semiconductor nano layer structure is formed on the stationary substrate; a de-laminating process is performed to separate the semiconductor nano layer structure from the second substrate; an electric Joule heat welding process is locally performed to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure.

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筆直直立奈米線陣列結構及其製造方法 Vertically Oriented Nanostructure and Fabricating Method Thereof

A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight nanometer-wires are uniformly distributed on the non-crystalline base, and the angle between each of the straight nanometer-wire and the non-crystalline base is 80-90 degrees. The straight nanometer-wires structure can be widely applied in semiconductor, optoelectronic, biological and energy field. What is worth to be noticed is that the non-crystalline base can be glass, ceramics, synthetic, resin, rubber or even metal foil, and the straight nanometer-wires and the non-crystalline base are still orthogonal to each other.

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